january 2012 doc id 18272 rev 2 1/7 7 txdvxx12 12 a high voltage triacs features on-state current (i t(rms) ): 12 a max. blocking voltage (v drm /v rrm ): 1200 v gate current (i gt ): 100 ma commutation @ 10 v/s: up to 42.5 a/ms noise immunity: 2 kv/s insulated package: ? 2,500 v rms (ul recognized: e81734). description the txdvxx12 series uses a high performance alternistor technology. featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans). to-220ab insulated a2 a1 g a2 a1 g table 1. device summary parameter TXDV812rg txdv1212rg blocking voltage v drm /v rrm 800 v 1200 v on-state current i t(rms) 12 a gate current i gt 100 ma www.st.com
characteristics txdvxx12 2/7 doc id 18272 rev 2 1 characteristics table 2. absolute maximum ratings (limiting values) symbol parameter value unit i t(rms) on-state rms current (180 conduction angle) t c = 90 c 12 a v drm v rrm repetitive peak off-state voltage TXDV812 t j = 125 c 800 v txdv1212 1200 i tsm non repetitive surge peak on-state current t p = 2.5 ms t j = 25 c 170 a t p = 8.3 ms 125 t p = 10 ms 120 i 2 ti 2 t value for fusing t p = 10 ms 72 a 2 s di/dt critical rate of rise of on-state current i g = 500 ma di g /dt = 1 a/s f = 50 hz 100 a/s t stg t j storage junction temperature range operating junction temperature range - 40 to + 150 - 40 to + 125 c v ins(rms) (1) insulation rms voltage 2500 v 1. a1, a2, gate terminals to case for 1 minute table 3. electrical characteristics (t j = 25 c, unless otherwise specified) symbol test conditions quadrant value unit TXDV812 txdv1212 i gt v d = 12 v dc, r l = 33 i-ii-iii max. 100 ma v gt i-ii-iii max. 1.5 v v gd v d = v drm r l = 3.3 k t j = 110 c i-ii-iii min. 0.2 v t gt v d = v drm i g = 500 ma di g /dt = 3 a/s i-ii-iii typ. 2.5 s i l i g = 1.2 x i gt i-iii typ. 100 ma ii 200 i h (1) i t = 500 ma gate open max. 100 ma dv/dt (1) linear slope up to: v d = 67% v drm gate open t j = 125 c min. 2 kv/s (di/dt)c (1) (dv/dt)c = 10 v/s t j = 110 c min. 42.5 30 a/ms v tm (1) i tm = 17 a t p = 380 s max. 1.95 v v to (1) threshold voltage max. 1.21 v r d (1) dynamic resistance max. 40 m i drm i rrm v drm = v rrm t j = 25 c max. 0.01 ma t j = 110 c 2 5 1. for either polarity of electrode a 2 voltage with reference to electrode a 1 .
txdvxx12 characteristics doc id 18272 rev 2 3/7 table 4. gate characteristics (maximum values) symbol parameter value unit p g(av) average gate power dissipation 1 w p gm peak gate power dissipation t p = 20 s 10 w i gm peak gate current t p = 20 s 4 a v gm peak positive gate voltage t p = 20 s 16 v table 5. thermal resistance symbol parameter value unit r th(j-a) junction to ambient 60 c/w r th(j-c) dc junction to case for dc 2.5 c/w r th(j-c) ac junction to case for 360 conduction angle (f = 50 hz) 1.9 c/w figure 1. max. rms power dissipation versus on-state rms current (f = 50hz). (curves limited by (di/dt)c) figure 2. max. rms power dissipation and max. allowable temperatures (t amb and t case ) for various r th 0123456789101112 0 2 4 6 8 10 12 14 16 18 20 180 = 180 = 120 = 90 = 60 = 30 p(w) i (a) t(rms) 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 16 18 20 - 90 - 95 - 100 - 105 - 110 - 115 - 120 - 125 p(w) t ( c) amb t ( c) case r th case to ambient r = 0 c/w 1 c/w 2 c/w 4 c/w th figure 3. on-state rms current versus case temperature figure 4. relative variation of thermal impedance versus pulse duration 0 102030405060708090100110120130 0 2 4 6 8 10 12 14 i (a) t(rms) t (c) c = 180 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.1 1 z/r th th t (s) p z th(j-c) z th(j-a)
characteristics txdvxx12 4/7 doc id 18272 rev 2 figure 9. safe turn-off operating area figure 5. relative variation of gate trigger current and holding current versus junction temperature figure 6. non repetitive surge peak on-state current versus number of cycles 2.5 2.0 1.5 1.0 0.5 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 t (c) j i gt i h i[t] hj i [t =25c] hj i[t] gt j i [t =25c] gt j . 120 100 80 60 40 20 0 0 1 0 1 00 1 000 i (a) tsm number of cycles t initial=25c j one cycle t = 20 ms figure 7. non-repetitive surge peak on-state current for a sinusoidal pulse and corresponding values of i 2 t figure 8. on-state characteristics (maximum values) 100 10 12 510 i (a), i t (a s) tsm 22 t (ms) p i t 2 i tsm t initial = 25c j 1000 100 10 1 123456 i (a) tm v (v) tm t j initial = 25 c t max. j v =1.21v r =0.040 t max.: j t0 t 1000 100 10 1 1 10 100 (dv/dt)c(v/s) t j = 110 c (di/dt)c(a/ms)
txdvxx12 package information doc id 18272 rev 2 5/7 2 package information epoxy meets ul94,v0 cooling method: c (by conduction) recommended torque value: 0.4 to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 6. to-220ab insulated dimensions ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 ?i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m2.60 0.102 c b2 c2 f ? i l a a1 a2 b e b1 i4 l3 l2 c1 m
ordering information txdvxx12 6/7 doc id 18272 rev 2 3 ordering information 4 revision history table 7. ordering information order code marking package we ight base qty delivery mode TXDV812rg TXDV812 to-220ab insulated 2.3 g 50 tube txdv1212rg txdv1212 table 8. document revision history date revision changes 30-mar-2011 1 initial release. 13-jan-2012 2 updated di/dt in ta bl e 2 , and added v to and r d in ta bl e 3
txdvxx12 doc id 18272 rev 2 7/7 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
|
